NTP13N10
MOSFET N-CH 100V 13A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP13N10 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at 25°C, with a maximum power dissipation of 64.7W (Tc). The Rds(On) is specified at 165mOhm maximum at 6.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 20nC maximum at 10V Vgs and input capacitance (Ciss) of 550pF maximum at 25V Vds. The NTP13N10 utilizes MOSFET technology and is packaged in a TO-220-3 through-hole configuration, suitable for use in industrial power supplies, automotive electronics, and general power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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