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NTP125N02RG

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NTP125N02RG

MOSFET N-CH 24V 15.9A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTP125N02RG is an N-Channel MOSFET designed for power switching applications. This component features a 24V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15.9A at 25°C ambient temperature, with a maximum power dissipation of 1.98W (Ta) and 113.6W (Tc). The Rds On is specified at a maximum of 4.6mOhm at 20A and 10V gate drive. Key parameters include a gate charge (Qg) of 28 nC at 4.5V and an input capacitance (Ciss) of 3440 pF at 20V drain-source voltage. The device utilizes MOSFET technology and is housed in a TO-220-3 through-hole package. This component is suitable for use in automotive and industrial power management systems. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15.9A (Ta)
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.98W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)24 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3440 pF @ 20 V

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