NTP125N02R
MOSFET PWR N-CH 125A 24V TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP125N02R is a robust N-Channel MOSFET designed for demanding power applications. This component boasts a Drain-to-Source Voltage (Vdss) of 24V and supports a continuous drain current of 15.9A at a case temperature of 25°C, with a maximum continuous rating of 125A. With a low on-resistance (Rds On) of 4.6mOhm at 20A and 10V Vgs, it minimizes conduction losses. The gate drive voltage range is specified from 4.5V to 10V, and a maximum gate-source voltage of ±20V is supported. Key parameters include a maximum gate charge (Qg) of 28nC at 4.5V and an input capacitance (Ciss) of 3440pF at 20V. The device is housed in a standard TO-220-3 package, suitable for through-hole mounting. Power dissipation is rated at 1.98W (TA) and 113.6W (TC). This MOSFET finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| Power Dissipation (Max) | 1.98W (Ta), 113.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |