NTP067N65S3H
POWER MOSFET, N-CHANNEL, SUPERFEManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SuperFET® III NTP067N65S3H is a 650 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole TO-220-3 packaged device offers a continuous drain current of 40A (Tc) and a maximum power dissipation of 266W (Tc). Featuring a low on-resistance of 67mOhm @ 20A, 10V and a low gate charge of 80 nC @ 10 V, it minimizes switching losses. The input capacitance (Ciss) is 3750 pF @ 400 V. This component is suitable for use in power supplies, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±30V.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 266W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 3.9mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 400 V |
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