NTNS4C69NTCG
MOSFET N-CH SMDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTNS4C69NTCG is an N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1 A at 25°C, with a maximum power dissipation of 178 mW at 25°C ambient. The device exhibits a low on-resistance (Rds On) of 155 mOhm at 300 mA and 4.5 V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 0.9 nC at 4.5 V and an input capacitance (Ciss) of 75 pF at 15 V. It operates within a temperature range of -55°C to 150°C. The NTNS4C69NTCG is housed in a compact SOT-883 (XDFN3) package measuring 1x0.6 mm. This MOSFET is suitable for use in various electronic systems, including power management and signal switching applications. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 300mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 178mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 15 V |