NTNS3A65PZT5GHW
MOSFET P-CH 20V 281MA SOT883Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTNS3A65PZT5GHW is a P-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 281mA at 25°C. The Rds On is specified at a maximum of 1.3 Ohms at 200mA and 4.5V gate drive. With a maximum power dissipation of 155mW, it is suitable for space-constrained designs. The SOT-883 (XDFN3) package, measuring 1x0.6 mm, facilitates high-density board layouts. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 281mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 155mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 44 pF @ 10 V |
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