NTNS3A65PZT5G
MOSFET P-CH 20V 281MA SOT883Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTNS3A65PZT5G is a P-Channel MOSFET designed for high-density applications. This device features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 281mA at 25°C (Ta). The Rds(on) is specified at a maximum of 1.3 Ohms when Id is 200mA and Vgs is 4.5V. Key electrical characteristics include a gate charge (Qg) of 1.1 nC (max) at 4.5V and an input capacitance (Ciss) of 44 pF (max) at 10V. The NTNS3A65PZT5G operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 155mW (Ta). It is supplied in a 3-XFDFN package, also known as SOT-883, with dimensions of 1x0.6mm, suitable for surface mounting. The device is available on tape and reel. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 281mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 155mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 44 pF @ 10 V |
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