NTNS3190NZT5G
MOSFET N-CH 20V 224MA 3XLLGAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTNS3190NZT5G is an N-Channel MOSFET designed for applications requiring efficient switching. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current capability of 224mA at 25°C ambient. The on-resistance (Rds On) is specified at a maximum of 1.4 Ohms at 100mA and 4.5V Vgs. Key parameters include a gate charge (Qg) of 0.7 nC maximum at 4.5V and an input capacitance (Ciss) of 15.8 pF maximum at 15V. The NTNS3190NZT5G is housed in a compact 3-XLLGA (0.62x0.62) surface mount package, ideal for space-constrained designs. It operates across a wide temperature range from -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics and battery-powered devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 224mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 120mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 3-XLLGA (0.62x0.62) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15.8 pF @ 15 V |
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