NTNS2K1P021ZTCG
MOSFET P-CH 20V 127MA 3XDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTNS2K1P021ZTCG is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20 V. It offers a continuous drain current (Id) of 127mA at 25°C and a maximum power dissipation of 125mW. The Rds On is specified at 5 Ohms maximum for a drain current of 100mA and a gate-source voltage of 4.5V. This device features a 3-XDFN package with dimensions of 0.42x0.62, suitable for surface mounting. Key electrical parameters include an input capacitance (Ciss) of 12800 pF maximum at 15V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management and signal switching applications across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 127mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 125mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 3-XDFN (0.42x0.62) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12800 pF @ 15 V |
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