NTMYS4D6N04CLTWG
MOSFET N-CH 40V 21A/78A LFPAK4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMYS4D6N04CLTWG is a 40V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component offers a continuous drain current of 21A at 25°C ambient temperature and 78A at 25°C case temperature. It features a low on-resistance of 4.5mOhm maximum at 35A and 10V, with a gate threshold voltage (Vgs(th)) of 2V at 40µA. The device supports gate drive voltages from 4.5V to 10V. Key electrical parameters include a maximum gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. The NTMYS4D6N04CLTWG is housed in a compact LFPAK4 (5x6) package, ideal for surface mounting. It is rated for operation across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1023, 4-LFPAK |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | LFPAK4 (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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