NTMT110N65S3HF
POWER MOSFET, N-CHANNEL, SUPERFEManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMT110N65S3HF is an N-Channel SuperFET® III, FRFET® MOSFET designed for high-efficiency power conversion. This device features a 650 V breakdown voltage (Vdss) and a continuous drain current (Id) capability of 30 A at 25°C (Tc), with a maximum power dissipation of 240 W (Tc). Offering a low on-resistance (Rds On) of 110 mOhm at 15 A and 10 V, this MOSFET utilizes advanced planar technology to minimize switching losses. Key parameters include a maximum gate charge (Qg) of 62 nC at 10 V and an input capacitance (Ciss) of 2635 pF at 400 V. The NTMT110N65S3HF is housed in a 4-PQFN (8x8) surface mount package, supplied on tape and reel. This component is suitable for demanding applications in power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: SuperFET® III, FRFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 740µA |
| Supplier Device Package | 4-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2635 pF @ 400 V |
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