NTMT045N065SC1
SILICON CARBIDE (SIC) MOSFET - 3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMT045N065SC1 is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance power applications. This device offers a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 55 A at 25°C (Tc). With a low on-resistance (Rds On) of 50 mOhm maximum at 25 A and 18 V, and a maximum power dissipation of 187 W (Tc), it facilitates efficient power conversion. The MOSFET features a gate-source voltage (Vgs) range of +22 V to -8 V and a gate charge (Qg) of 105 nC maximum at 18 V. Its input capacitance (Ciss) is 1870 pF maximum at 325 V. The component is housed in a 4-TDFN (8x8) surface mount package and operates across a wide temperature range of -55°C to 175°C (TJ). The NTMT045N065SC1 is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 8mA |
| Supplier Device Package | 4-TDFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 325 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
