NTMSD6N303R2SG
MOSFET N-CH 30V 6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMSD6N303R2SG is an N-Channel MOSFET from the FETKY™ series. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 6A at 25°C. Key specifications include a maximum on-resistance of 32mOhm at 6A and 10V gate-source voltage, with a gate charge of 30 nC at 10V. The device includes an integrated Schottky diode, providing improved performance characteristics. It is housed in an 8-SOIC package suitable for surface mounting and has a maximum power dissipation of 2W. This MOSFET is utilized in various industrial applications including power management and switching circuits.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V |
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