NTMSD6N303R2
MOSFET N-CH 30V 6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMSD6N303R2 is an N-Channel MOSFET from the FETKY™ series, suitable for power management applications. This device features a 30V drain-source voltage and a continuous drain current of 6A at 25°C. The low on-resistance of 32mOhm at 6A and 10V Vgs is achieved through advanced MOSFET technology. Integrated within the 8-SOIC package is an isolated Schottky diode, offering enhanced performance characteristics. Key parameters include a gate charge of 30 nC at 10V Vgs and an input capacitance of 950 pF at 24V Vds. With a maximum power dissipation of 2W, this surface mount component operates across a temperature range of -55°C to 150°C. It is supplied in Tape & Reel packaging. This MOSFET is commonly utilized in automotive and industrial power supply designs.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V |
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