NTMSD3P303R2G
MOSFET P-CH 30V 2.34A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTMSD3P303R2G is a P-Channel MOSFET from the FETKY™ series, designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2.34A at 25°C. The NTMSD3P303R2G offers a low On-Resistance (Rds On) of 85mOhm at 3.05A and 10V Vgs, and includes an isolated Schottky diode for enhanced performance. Key electrical parameters include a Gate Charge (Qg) of 25 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 750 pF maximum at 24V Vds. The component is housed in an 8-SOIC package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.34A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.05A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 730mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 24 V |
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