NTMSD3P102R2SG
MOSFET P-CH 20V 2.34A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMSD3P102R2SG is a P-Channel MOSFET from the FETKY™ series, designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.34A at 25°C. The NTMSD3P102R2SG offers a low on-resistance (Rds On) of 85mOhm maximum at 3.05A and 10V gate-source voltage, contributing to reduced power dissipation of 730mW. Its integrated Schottky diode (Isolated) enhances performance and protection. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 25nC maximum at 10V and input capacitance (Ciss) of 750pF maximum at 16V. This component is utilized in various industries, including automotive and industrial power management systems.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.34A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.05A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 730mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |