NTMSD2P102R2SG
MOSFET P-CH 20V 2.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMSD2P102R2SG is a P-Channel MOSFET designed for demanding power management applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C (Ta). With a low on-resistance of 90mOhm at 2.4A and 4.5V gate-source voltage, it optimizes power efficiency. The device includes an isolated Schottky diode, enhancing its switching performance. Packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, it is suitable for various industrial and automotive systems. Key parameters include a maximum gate charge (Qg) of 18 nC at 4.5V and an input capacitance (Ciss) of 750 pF at 16V. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |
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