NTMSD2P102R2
MOSFET P-CH 20V 2.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, NTMSD2P102R2, offers a 20V drain-source voltage and a continuous drain current of 2.3A at 25°C. This device features a low on-resistance of 90mOhm maximum at 2.4A, 4.5V Vgs, and includes an isolated Schottky diode. Designed for surface mount applications, it is housed in an 8-SOIC package. Input capacitance (Ciss) is a maximum of 750pF at 16V Vds, with a gate charge (Qg) of 18nC maximum at 4.5V Vgs. This component is utilized in various industrial applications, including power management and switching circuits. The NTMSD2P102R2 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |
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