NTMSD2P102LR2G
MOSFET P-CH 20V 2.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMSD2P102LR2G is a P-Channel MOSFET from the FETKY™ series. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2.3A at 25°C. With a maximum power dissipation of 710mW (Ta), it offers an Rds On of 90mOhm at 2.4A and 4.5V. The device integrates a Schottky Diode, providing enhanced performance. Key parameters include a Gate Charge (Qg) of 18 nC and an Input Capacitance (Ciss) of 750 pF. It is supplied in a surface mount 8-SOIC package, suitable for operation across a wide temperature range of -55°C to 150°C. This component finds application in power management solutions for automotive and industrial sectors.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |
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