NTMS7N03R2
MOSFET N-CH 30V 4.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS7N03R2 is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 4.8 A at 25°C. The low on-resistance (Rds On) of 23 mOhm at 7 A and 10 V gate drive makes it suitable for power management in various industrial sectors. With a junction-to-ambient thermal resistance and maximum power dissipation of 800 mW (Ta), it is provided in a compact 8-SOIC surface mount package for simplified board assembly. Key electrical characteristics include a gate charge (Qg) of 43 nC at 10 V and input capacitance (Ciss) of 1190 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ). This component is supplied on tape and reel (TR) for automated manufacturing processes.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 25 V |
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