NTMS5P02R2SG
MOSFET P-CH 20V 3.95A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS5P02R2SG is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 3.95A at 25°C. With a maximum on-resistance (Rds On) of 33mOhm at 4.5V Vgs and 5.4A Id, it offers low conduction losses. The device utilizes Metal Oxide technology and is housed in an 8-SOIC package for surface mounting. Key parameters include a gate charge (Qg) of 35nC, input capacitance (Ciss) of 1900pF, and a maximum power dissipation of 790mW. This MOSFET is suitable for use in automotive and industrial applications requiring precise power control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.95A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 790mW (Ta) |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 16 V |
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