NTMS5P02R2
MOSFET P-CH 20V 3.95A 8-SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS5P02R2 is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) rating of 7.05 A at 25°C (Tj). The low on-resistance (Rds On) of 33 mOhm at 5.4 A and 4.5 V Vgs minimizes conduction losses. The NTMS5P02R2 exhibits a typical gate charge (Qg) of 35 nC at 4.5 V and an input capacitance (Ciss) of 1900 pF at 16 V. This MOSFET is supplied in an 8-SOIC package for surface mounting, making it suitable for compact designs. The threshold voltage (Vgs(th)) is a maximum of 1.25 V at 250 µA. This component is commonly utilized in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.05A (Tj) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 16 V |