NTMS5838NLR2G
MOSFET N-CH 40V 5.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS5838NLR2G is an N-Channel MOSFET designed for demanding power applications. It features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 5.8A at 25°C. With a maximum Rds(on) of 25mOhm at 7A and 10V Vgs, this device offers efficient switching characteristics. The NTMS5838NLR2G operates with a gate drive voltage range of 4.5V to 10V and has a maximum gate charge (Qg) of 17 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 785 pF at 20V. This MOSFET is housed in an 8-SOIC package suitable for surface mounting and can operate within an extended temperature range of -55°C to 150°C. The maximum power dissipation is 1.5W. This component finds application in various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 20 V |
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