NTMS5835NLR2G
MOSFET N-CH 40V 9.2A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS5835NLR2G is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 40V. This device offers a continuous drain current (Id) capability of 9.2A at 25°C and features a low on-resistance (Rds On) of 10mOhm at 10A and 10V. The 8-SOIC package (0.154", 3.90mm Width) is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Key parameters include a Gate Charge (Qg) of 50 nC at 10V and Input Capacitance (Ciss) of 2115 pF at 20V. This component is designed for applications requiring efficient power switching, commonly found in industrial automation, automotive systems, and consumer electronics. The maximum power dissipation is rated at 1.5W.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2115 pF @ 20 V |