NTMS4N01R2G
MOSFET N-CH 20V 3.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4N01R2G is an N-Channel MOSFET designed for efficient power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 3.3 A at 25°C with a typical power dissipation of 770 mW (Ta). The device offers a low on-resistance (Rds On) of 40 mOhm maximum at 4.2 A and 4.5 V gate drive. Key parameters include a gate charge (Qg) of 16 nC maximum at 4.5 V and an input capacitance (Ciss) of 1200 pF maximum at 10 V. It supports gate drive voltages from 2.5 V to 4.5 V and has a maximum gate-source voltage (Vgs) of ±10 V. The NTMS4N01R2G utilizes MOSFET technology and is housed in a surface mount 8-SOIC package, supplied on tape and reel. This component is suitable for use in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 770mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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