NTMS4N01R2
MOSFET PWR N-CHAN 4.2A 20V 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS4N01R2 is a N-Channel Power MOSFET designed for demanding applications. This surface mount component, packaged in an 8-SOIC configuration, offers a low Rds(on) of 40mOhm at 4.2A and 4.5V Vgs, ensuring efficient power transfer. With a continuous drain current capability of 4.2A and a drain-source voltage of 20V, it is suitable for power management solutions. The device dissipates a maximum of 770mW (Ta) and operates across a wide temperature range of -55°C to 150°C (TJ). The NTMS4N01R2 is utilized in various industrial sectors, including consumer electronics and industrial automation, where reliable power switching is critical. It features a ±10V gate-source voltage limit.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.2A, 4.5V |
| Power Dissipation (Max) | 770mW (Ta) |
| Supplier Device Package | 8-SOIC |
| Vgs (Max) | ±10V |
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