NTMS4939NR2G
MOSFET N-CH 30V 8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4939NR2G is an N-Channel MOSFET designed for demanding applications. This component features a 30 V drain-source voltage and supports a continuous drain current of 8 A at 25°C with a maximum power dissipation of 800 mW. The device exhibits a low on-resistance of 8.4 mOhm at 7.5 A and 10 V gate-source voltage. It is housed in a standard 8-SOIC surface mount package, facilitating efficient board integration. Key electrical characteristics include a maximum gate-source voltage of ±20V, a gate charge of 25 nC at 10 V, and input capacitance of 2000 pF at 25 V. The NTMS4939NR2G is suitable for use across a wide operating temperature range of -55°C to 150°C. This MOSFET is commonly employed in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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