NTMS4937NR2G
MOSFET N-CH 30V 8.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMS4937NR2G is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. It features a continuous drain current (Id) of 8.6A at 25°C and a maximum power dissipation (Pd) of 810mW (Ta). This component utilizes Metal Oxide technology and offers a low on-resistance (Rds On) of 6.5mOhm at 7.5A and 10V Vgs. The gate charge (Qg) is a maximum of 38.5 nC at 10V Vgs, with input capacitance (Ciss) at 2563 pF at 25V. It supports gate drive voltages from 4.5V to 10V and has a maximum Vgs of ±20V. The NTMS4937NR2G is provided in an 8-SOIC package suitable for surface mounting and operates within a temperature range of -55°C to 150°C. This device is commonly employed in power management applications across various industries. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 810mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2563 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
