NTMS4935NR2G
MOSFET N-CH 30V 10A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4935NR2G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C ambient, with a maximum power dissipation of 810mW (Ta). The low on-resistance of 5.1mOhm at 7.5A and 10V Vgs makes it suitable for efficient power switching. It utilizes MOSFET technology with a gate charge (Qg) of 52.1 nC at 10V and input capacitance (Ciss) of 3639 pF at 25V. The NTMS4935NR2G is available in an 8-SOIC package, facilitating efficient surface mounting. Its operating temperature range is -55°C to 150°C. This component is commonly employed in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 810mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3639 pF @ 25 V |
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