NTMS4920NR2G
MOSFET N-CH 30V 10.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4920NR2G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 10.6 A at 25°C (Ta). The low on-resistance (Rds On) of 4.3 mOhm at 7.5 A and 10 V gate drive ensures high efficiency in power switching. With a gate charge (Qg) of 58.9 nC at 10 V and input capacitance (Ciss) of 4068 pF at 25 V, it offers robust switching performance. The NTMS4920NR2G is housed in an 8-SOIC package, suitable for surface mounting and operating across a temperature range of -55°C to 150°C. Its power dissipation capability is 820 mW (Ta). This component is typically utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 58.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4068 pF @ 25 V |
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