NTMS4917NR2G
MOSFET N-CH 30V 7.1A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4917NR2G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 30V drain-source breakdown voltage and a continuous drain current capability of 7.1A at 25°C, this device excels in power management and switching functions. Its low Rds(on) of 11mOhm at 11A and 10V gate drive ensures high efficiency. The MOSFET offers a gate charge of 15.6 nC at 4.5V and an input capacitance of 1054 pF at 25V. Packaged in an 8-SOIC (0.154" width) and supplied on tape and reel, it is suitable for surface mount assembly. With a maximum power dissipation of 880mW at 25°C and an operating temperature range of -55°C to 150°C, the NTMS4917NR2G is a robust solution for automotive, industrial, and consumer electronics power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 880mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1054 pF @ 25 V |
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