NTMS4873NFR2G
MOSFET N-CH 30V 7.1A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4873NFR2G is a 30 V N-Channel Power MOSFET designed for efficient power switching applications. Featuring a low Rds(on) of 12 mOhm at 10A and 10V Vgs, this device offers excellent conduction loss performance. The MOSFET supports drive voltages between 4.5V and 10V, with a gate charge of 16 nC at 4.5 V and input capacitance of 1900 pF at 15 V. It is rated for a continuous drain current of 7.1A (Ta) and a maximum power dissipation of 870mW (Ta). Packaged in an 8-SOIC (0.154", 3.90mm Width) format for surface mounting, the NTMS4873NFR2G operates across a wide temperature range of -55°C to 150°C. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 870mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
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