NTMS4872NR2G
MOSFET N-CH 30V 6A/10.2A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4872NR2G is an N-Channel MOSFET designed for efficient power switching applications. It features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 6A at ambient temperature (Ta) and 10.2A at case temperature (Tc). With a maximum Rds(on) of 13.5mOhm at 10.2A and 10V Vgs, this device exhibits low conduction losses. The NTMS4872NR2G operates with a gate-source voltage (Vgs) range of 4.5V to 10V for optimal performance and has a gate charge (Qg) of 15 nC maximum at 4.5 V. Input capacitance (Ciss) is rated at 1700 pF maximum at 15 V. This MOSFET offers a maximum power dissipation of 820mW (Ta) and is housed in an 8-SOIC package for surface mounting. It is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C (TJ). The NTMS4872NR2G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 10.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |
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