NTMS4840NR2G
MOSFET N-CH 30V 4.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS4840NR2G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.5A at 25°C. The device exhibits a low on-resistance of 24mOhm maximum at 6.9A and 10V gate-source voltage, with gate charge (Qg) specified at 9.5 nC maximum. Input capacitance (Ciss) is a maximum of 520 pF at 15V. The NTMS4840NR2G is packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration, suitable for high-density board layouts. It operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in various industries including automotive and industrial power management. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 6.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 680mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 15 V |