NTMS4816NR2G
MOSFET N-CH 30V 6.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4816NR2G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 6.8 A at 25°C. Its low on-resistance is specified as 10 mOhm maximum at 9 A and 10 V Vgs, with a drive voltage range of 4.5 V to 10 V. The device exhibits a typical Gate Charge (Qg) of 18.3 nC at 10 V Vgs and an Input Capacitance (Ciss) of 1060 pF maximum at 25 V Vds.
With a maximum power dissipation of 780 mW (Ta), the NTMS4816NR2G is housed in a standard 8-SOIC (0.154", 3.90mm Width) surface mount package, supplied on tape and reel (TR). The operating temperature range is from -55°C to 150°C (TJ), and it supports a Vgs(th) of 3 V at 250 µA with a maximum Vgs of ±20 V. This MOSFET is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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