NTMS4807NR2G
MOSFET N-CH 30V 9.1A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4807NR2G is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 9.1 A at 25°C. The device offers a low on-resistance (Rds On) of 6.1 mOhm at 14.8 A and 10 V gate drive, with a maximum gate charge (Qg) of 24 nC at 4.5 V.
The NTMS4807NR2G is packaged in an 8-SOIC surface mount configuration, suitable for high-density board designs. Its maximum power dissipation is rated at 860 mW. This MOSFET is engineered for operation across a wide temperature range from -55°C to 150°C. Applications for this component include automotive systems, power management, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 14.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 24 V |
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