NTMS4802NR2G
MOSFET N-CH 30V 11.1A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMS4802NR2G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) rating of 11.1 A at 25°C. With a maximum Rds(on) of 4 mOhm at 18 A and 10 V gate drive, it minimizes conduction losses. The device offers a gate charge (Qg) of 36 nC at 4.5 V, contributing to fast switching speeds. Its input capacitance (Ciss) is 5300 pF at 25 V. This MOSFET is housed in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. The NTMS4802NR2G finds application in areas such as battery management, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 910mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |