NTMS4706NR2G
MOSFET N-CH 30V 6.4A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4706NR2G is an N-Channel MOSFET designed for efficient power switching applications. This component features a maximum Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain current (Id) of 6.4 A at 25°C ambient. With a low on-resistance of 12 mOhm at 10.3 A and 10 Vgs, it minimizes conduction losses. The device is housed in an 8-SOIC package for surface mounting and offers a maximum power dissipation of 830 mW. Key parameters include a gate charge (Qg) of 15 nC at 4.5 V and input capacitance (Ciss) of 950 pF at 24 V. The NTMS4706NR2G is suitable for use in various industries including automotive, industrial automation, and consumer electronics where reliable power management is critical. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V |
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