NTMS4706NR2
MOSFET N-CH 30V 6.4A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS4706NR2 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 6.4A at 25°C (Ta). The NTMS4706NR2 offers a low on-resistance of 12mOhm maximum at 10.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 15 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 950 pF maximum at 24V Vds. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C. This component finds application in industries such as consumer electronics and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V |
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