NTMS4705NR2G
MOSFET N-CH 30V 7.4A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS4705NR2G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 7.4 A at 25°C, with a maximum power dissipation of 850 mW (Ta). The Rds On is specified at a low 10 mOhm at 12 A and 10 V Vgs, with a typical gate charge (Qg) of 18 nC at 4.5 V.
The NTMS4705NR2G utilizes MOSFET technology and is housed in an 8-SOIC package, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ). This device is ideal for use in power management solutions, motor control, and switching power supplies within the automotive and industrial sectors. Drive voltage requirements are between 4.5 V and 10 V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1078 pF @ 24 V |
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