NTMS4700NR2G
MOSFET N-CH 30V 8.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMS4700NR2G is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 8.6 A at 25°C, with a maximum power dissipation of 860 mW. The device exhibits a low on-resistance (Rds On) of 7.2 mOhm at 13 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 24 nC at 4.5 V and input capacitance (Ciss) of 1600 pF at 24 V. The NTMS4700NR2G is packaged in an 8-SOIC surface mount configuration and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 24 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
