NTMS4700NR2
MOSFET N-CH 30V 8.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4700NR2 is an N-Channel power MOSFET designed for efficient switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 8.6A at 25°C ambient temperature, with a maximum power dissipation of 860mW. The NTMS4700NR2 is specified with a low on-resistance of 7.2mOhm at 13A and 10V Vgs. It operates with gate-source drive voltages ranging from 4.5V to 10V, and has a maximum gate charge of 24nC at 4.5V. The input capacitance (Ciss) is rated at 1600pF at 24V. This MOSFET is housed in an 8-SOIC package for surface mounting and is supplied on tape and reel. It is suitable for use in power management and control circuits across various industrial sectors. The maximum gate-source voltage is ±20V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 24 V |