NTMS4503NR2G
MOSFET N-CH 28V 9A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4503NR2G is an N-Channel MOSFET designed for demanding applications. This surface-mount component features a 28 V drain-source voltage and a continuous drain current capability of 9 A at 25°C. Its low on-resistance of 8 mOhm at 14 A and 10 V gate drive voltage, combined with a maximum gate charge of 23 nC at 4.5 V, ensures efficient switching performance. The device offers a power dissipation of 930 mW at 25°C in its 8-SOIC package. Operating across a wide temperature range of -55°C to 150°C, the NTMS4503NR2G is suitable for use in automotive and industrial power management systems. The package is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 16 V |