NTMS4404NR2
MOSFET N-CH 30V 7A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS4404NR2 is an N-Channel Power MOSFET designed for efficient power switching applications. Featuring a drain-source voltage (Vdss) of 30 V, this component offers a continuous drain current (Id) of 7A at 25°C with a maximum power dissipation of 830mW. The Rds On is specified at a low 11.5mOhm at 12A and 10V Vgs. This device utilizes a surface mount 8-SOIC package, suitable for high-density board designs, and operates across a wide temperature range from -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 70 nC and input capacitance (Ciss) of 2500 pF. The NTMS4404NR2 finds application in various industries including automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 24 V |
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