NTMS4176PR2G
MOSFET P-CH 30V 5.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS4176PR2G is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain to Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 5.5 A at 25°C. The Rds On is specified at a maximum of 18 mOhm at 9.6 A and 10 V gate drive. It operates with a gate drive voltage range of 4.5 V to 10 V and has a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. The NTMS4176PR2G boasts a gate charge (Qg) of 17 nC at 4.5 V and input capacitance (Ciss) of 1720 pF at 24 V. With a maximum power dissipation of 810 mW (Ta), it is housed in a surface mount 8-SOIC package and operates across a temperature range of -55°C to 150°C. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 810mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 24 V |