NTMS4107NR2G
MOSFET N-CH 30V 11A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS4107NR2G is an N-Channel Power MOSFET designed for demanding applications. This 30V device offers a continuous drain current (Id) of 11A at 25°C, with a low on-resistance (Rds On) of 4.5mOhm at 15A and 10V Vgs. Featuring a 4.5V gate drive, it boasts a gate charge (Qg) of 45nC at 4.5V and an input capacitance (Ciss) of 6000pF at 15V. The NTMS4107NR2G is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Its 930mW power dissipation at 25°C makes it suitable for power management and switching applications in sectors such as automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 15 V |
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