NTMS4101PR2
MOSFET P-CH 20V 6.9A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMS4101PR2 is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 6.9A at 25°C. With a low on-resistance (Rds On) of 19mOhm at 6.9A and 4.5V Vgs, it offers efficient power switching. The gate drive voltage ranges from 2.5V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. Key parameters include input capacitance (Ciss) of 3200pF at 10V Vds and gate charge (Qg) of 32nC at 4.5V Vgs. This MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and operates across a temperature range of -55°C to 150°C (Tj), with a maximum power dissipation of 1.38W (Tj). The NTMS4101PR2 is commonly utilized in automotive and industrial power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 6.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Tj) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 10 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
