NTMS3P03R2G
MOSFET P-CH 30V 2.34A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMS3P03R2G is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 2.34 A at 25°C. With a maximum power dissipation of 730 mW (Ta), it is well-suited for power management and switching functions. The Rds On is specified at a maximum of 85 mOhm at 3.05 A and 10 V gate drive. Key characteristics include a gate charge of 25 nC at 10 V and input capacitance of 750 pF at 24 V. The NTMS3P03R2G is available in an 8-SOIC package for surface mount applications and operates across a wide temperature range of -55°C to 150°C. This device finds utility in various industries, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.34A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 730mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 24 V |
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