NTMS10P02R2
MOSFET P-CH 20V 8.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMS10P02R2 is a P-Channel MOSFET, designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 8.8 A at 25°C, with a maximum power dissipation of 1.6 W. The onsemi NTMS10P02R2 offers a low on-resistance (Rds On) of 14 mOhm at 10 A and 4.5 V gate drive. It is supplied in a surface mount 8-SOIC package, suitable for high-density board layouts. The operating temperature range is from -55°C to 150°C. This MOSFET is utilized in automotive and industrial electronics, where reliable power management is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 16 V |
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