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NTMKE4892NT1G

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NTMKE4892NT1G

MOSFET N-CH 30V 26A/148A 4ICEPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMKE4892NT1G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 26A at a typical ambient temperature and 148A under continuous drain conditions at 25°C case temperature. The low on-resistance of 2.6 mOhm at 24A and 10V gate drive voltage minimizes conduction losses. With a maximum power dissipation of 2.8W (Ta) and 89W (Tc), this MOSFET is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 61 nC at 10V and input capacitance (Ciss) of 4270 pF at 15V. The NTMKE4892NT1G utilizes advanced MOSFET technology and is housed in a 4-ICEPAK package with an E1 PAD for efficient thermal management. The operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in automotive, industrial power supplies, and renewable energy systems where robust performance and thermal characteristics are critical. The package is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-ICEPAK
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package4-ICEPAK - E1 PAD (6.3x4.9)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4270 pF @ 15 V

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